TEOS
Electronics Ultra-Pure
Electronics Chemical

Tetraethyl Orthosilicate (TEOS)

Premium electronics grade TEOS manufactured to meet stringent semiconductor industry specifications for CVD silicon dioxide deposition and dielectric applications. Provides exceptional purity and consistency with ultra-high quality control for advanced semiconductor manufacturing processes.

  • Electronics Grade Purity
  • CVD Silicon Dioxide Deposition
  • Dielectric Layer Formation
  • Ultra-Low Metal Impurities
  • Consistent Precursor Quality
  • Advanced Semiconductor Processing
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Technical Specifications

Purity: ≥98%
Silicon Content: 13.4-13.6%
Metal Impurities: ≤ 0.1 ppm total
Chloride Content: ≤ 1 ppm
Moisture Content: ≤ 10 ppm
Particle Count: ≤ 100 per mL
Boiling Point: 168°C
Density: 0.93 g/cm³ @ 20°C
Shelf Life: 12 months at RT
Packaging: 1L, 5L, 25L containers

Applications

Silicon Dioxide Deposition
CVD Processes
Dielectric Films
Insulation Layers
Semiconductor Manufacturing
IC Fabrication
Thin Film Deposition
Chemical Vapor Deposition
Process Development
Quality Control
Electronic Manufacturing
R&D Applications

Industry-Specific Grades

DRAVYOM offers specialized TEOS grades tailored for specific electronic applications, ensuring optimal performance and regulatory compliance across diverse manufacturing requirements.

Semiconductor Grade
Purity: ≥99% Metal Impurities: ≤ 0.01 ppm Moisture: ≤ 5 ppm Application: IC manufacturing
CVD Grade
Purity: ≥98% Deposition Rate: Controlled Film Quality: Excellent Application: CVD processes
Dielectric Grade
Purity: ≥97% Dielectric Properties: High Uniformity: Excellent Application: Dielectric films
Research Grade
Purity: ≥95% Batch Consistency: ±2% Documentation: Complete Application: R&D work

Quality Standards

DRAVYOM's Tetraethyl Orthosilicate (TEOS) is manufactured under stringent quality control protocols, meeting international electronics standards including SEMI, ASTM, and ISO specifications. Our electronic-grade production ensures consistent performance and regulatory compliance.

ISO 9001:2015 Certified Manufacturing
SEMI Standards Compliance
≥98% Purity Guarantee
Advanced Quality Testing
Ultra-Low Metal Impurities
Batch-to-Batch Consistency
Traceable Certificate of Analysis
Controlled Environment Storage

Advanced Chemical Properties & Performance

Electronic Grade Tetraethyl Orthosilicate exhibits exceptional chemical properties essential for semiconductor manufacturing applications. Its ultra-pure composition and precise formulation ensure reliable performance in demanding CVD and deposition processes.

Chemical Properties
Molecular Weight: 208.33 g/mol
Hydrolysis Rate: Controlled for CVD
Decomposition Temp: 650-750°C
Dielectric Constant: 3.9 (SiO₂ film)
Physical Properties
Boiling Point: 168°C
Melting Point: -82°C
Density: 0.933 g/cm³ (25°C)
Vapor Pressure: 1.3 kPa (25°C)
CVD Properties
Deposition Rate: 50-500 nm/min
Film Uniformity: ±2% across wafer
Step Coverage: Excellent conformality
Volatility: Optimal for CVD
Purity Specifications
Purity: ≥98% (electronic grade)
Metal Impurities: ≤1 ppm each
Water Content: ≤10 ppm
Particle Count: ≤100 particles/mL
Stability Properties
Shelf Life: 12 months (proper storage)
Moisture Sensitivity: Hydrolysis-sensitive
Temperature Stability: Stable 15-25°C
Container Compatibility: Stainless steel, PTFE

Performance Characteristics

Detailed performance metrics demonstrate Electronic Grade TEOS superiority in semiconductor processing applications with exceptional precision, uniformity, and reproducibility across diverse CVD and deposition processes.

Deposition Performance

Uniformity: ±2% across wafer surface

Exceptional film quality
Film Properties

Dielectric: 3.9 (SiO₂ films)

Excellent electrical properties
Process Control

Reproducibility: ±1% batch-to-batch

Consistent manufacturing results
Temperature Range

CVD: 650-750°C optimal

Flexible processing conditions
Purity Level

Grade: ≥98% electronic grade

Ultra-pure precursor
Deposition Rate

Rate: 50-500 nm/min controlled

Optimized manufacturing throughput

Safety Information

Flammable liquid and vapor that may cause respiratory and skin irritation. Handle in well-ventilated areas with appropriate protective equipment including chemical-resistant gloves, safety goggles, and protective clothing. Keep away from heat, sparks, and open flames. Ensure proper fire safety equipment is available.

Flammable
Respiratory Irritant
Eye/Skin Irritant

Storage & Handling

Store in original containers in cool, dry, well-ventilated areas away from heat sources and moisture. Keep containers tightly sealed and protected from humidity. Use only with appropriate chemical handling equipment and follow all flammable liquid safety protocols and moisture control procedures.

Cool storage (15-25°C)
Adequate ventilation required
Moisture-resistant containers
Fire safety equipment
Inert atmosphere storage
Secure chemical storage

Chemical Mechanisms & Reaction Pathways

Tetraethyl orthosilicate exhibits controlled hydrolysis and condensation chemistry enabling precise silicon dioxide formation with predictable deposition pathways and uniform film quality for semiconductor device fabrication.

Sol-Gel Chemistry

Controlled hydrolysis forms silicon dioxide precursors

Predictable film formation rates
Uniform Deposition

Consistent film thickness and composition control

Excellent step coverage capability
Temperature Control

Optimized deposition temperature for film quality

Low-temperature processing capability
Process Flexibility

Compatible with various deposition techniques

Versatile processing conditions

Regulatory Compliance & Documentation

Comprehensive regulatory compliance ensures global semiconductor facility access with complete documentation packages supporting international standards and semiconductor manufacturing process validations.

SEMI Standards

Semiconductor Equipment and Materials International compliance

Electronic Grade

Ultra-high purity specifications for semiconductor manufacturing

Precursor Grade Quality

Optimized specifications for CVD and coating applications

REACH Registration

European Union chemical regulation compliance

Process Validation

Supported semiconductor process validation documentation

SDS Documentation

Multi-language Safety Data Sheets (16 sections, GHS compliant)

Technical Support & Value-Added Services

DRAVYOM's semiconductor process engineering team provides comprehensive deposition process support, optimization assistance, and technical services to optimize TEOS performance in your specific manufacturing applications.

Process Development
  • CVD process optimization support
  • Temperature and flow rate optimization
  • Film quality enhancement
  • Custom deposition procedures
Analytical Services
  • Film thickness uniformity testing
  • Precursor purity verification
  • Deposition rate characterization
  • Process monitoring support
Technical Support
  • CVD equipment troubleshooting
  • Process setup and optimization
  • Safety training and protocols
  • Manufacturing best practices
Supply Solutions
  • Custom purity specifications
  • Emergency supply arrangements
  • Specialized packaging options
  • Global semiconductor facility support

Environmental Impact & Sustainability

Our TEOS production emphasizes environmental responsibility through sustainable manufacturing practices, waste minimization, and comprehensive environmental impact management for semiconductor manufacturing operations.

Solvent Recovery

Advanced solvent recovery and recycling systems

Water Treatment

Advanced wastewater treatment and recycling systems

Clean Production

Energy-efficient manufacturing with emission controls

Safe Disposal

Comprehensive guidance for semiconductor waste management

ISO 14001

Environmental management system certified production

Carbon Footprint

Optimized transportation and packaging solutions

Manufacturing Excellence & Quality Control

DRAVYOM's state-of-the-art specialty chemical manufacturing facility employs advanced purification technology and continuous monitoring systems to ensure consistent TEOS quality and performance across all production batches.

Production Process

Advanced synthesis and purification in controlled environment

Multi-stage distillation for precursor grade quality
Quality Testing

Comprehensive testing including water content and trace impurities

GC-MS verification and deposition performance testing
Quality Systems

ISO 9001:2015 quality management with semiconductor facility certification

Continuous improvement and process validation
Packaging Control

Moisture-resistant containers with contamination prevention systems

Chemical stability and shelf-life assurance

Market Applications & Performance Data

Comprehensive semiconductor manufacturing data demonstrating TEOS effectiveness across diverse deposition applications with quantified performance metrics and process validations.

Semiconductor Fabs
Deposition Rate: Controlled 50-500 Å/min Uniformity: <±2% across wafer Process Yield: 99.9% device quality
Research Facilities
Film Quality: Low-stress silicon oxide Reproducibility: >99% batch consistency Innovation: Advanced device support
Manufacturing Lines
Reliability: 99.9% process consistency Throughput: Optimized deposition cycles Cost Efficiency: Reduced precursor consumption

DRAVYOM Competitive Advantages

Superior Purity

Consistently exceeds precursor grade specifications with ultra-low impurities and exceptional deposition performance

Reliable Supply

Guaranteed availability with strategic inventory management and precursor chemical production scheduling

CVD Expertise

Dedicated process engineering team provides deposition development and manufacturing support

Quality Assurance

Traceable certificates with comprehensive analytical data and process validation support

Global Standards

International compliance with SEMI and precursor grade specifications

Partnership Approach

Collaborative relationships with semiconductor facilities and custom process development