Gallium Arsenide (GaAs) Etchants
Electronic Premium
Electronic Grade Chemical

Gallium Arsenide (GaAs) Etchants

Ultra-pure electronic grade Gallium Arsenide Etchants manufactured to meet stringent semiconductor industry specifications. Our GaAs etchants provide excellent selectivity and precision for compound semiconductor device fabrication and advanced electronics manufacturing.

  • Electronic Grade Purity
  • Superior Etching Selectivity
  • Precise Pattern Definition
  • Compound Semiconductor Compatible
  • Ultra-Low Contamination
  • Advanced Device Performance
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Technical Specifications

Etchant Type: Phosphoric acid based
Primary Component: H₃PO₄ (85%)
Secondary Component: H₂O₂ (30%)
Tertiary Component: H₂O (deionized)
Standard Ratio: H₃PO₄:H₂O₂:H₂O = 3:1:1
Etch Rate (GaAs): 0.5-5 μm/min
Selectivity (GaAs:AlGaAs): 50:1-100:1
Working Temperature: 20-40°C
pH Value: 1.0-2.0
Surface Roughness: ≤ 5 nm RMS
Metal Impurities: ≤ 0.1 ppm each
Particle Count: ≤ 50 per mL (≥0.3μm)
Anisotropy: Crystal orientation dependent
Undercutting: Controlled lateral etch
Bath Life: 4-8 hours continuous use
Shelf Life: 6 months (components separate)
Packaging Options: 1L, 4L component kits

Applications

GaAs Wafer Etching
III-V Semiconductor Processing
Mesa Etching
Device Isolation
HBT Fabrication
HEMT Processing
Quality Control
Research Applications
Optoelectronics
Academic Research
Process Development
Material Analysis

Industry-Specific Grades

DRAVYOM offers specialized gallium arsenide etchant formulations tailored for specific III-V semiconductor processing requirements, ensuring optimal etch rates, selectivity, and surface quality for diverse compound semiconductor applications.

High-Rate Etchant
Etch Rate: 5 μm/min Fast Processing Smooth Surface: ≤2 nm RMS Application: Bulk removal
Precision Etchant
Etch Rate: 0.5 μm/min High Selectivity: 100:1 Controlled Depth Application: Device fabrication
Research Grade
Custom Formulations Small Volumes: Available Variable Ratios Application: R&D applications
Production Grade
Standard 3:1:1 Ratio Consistent Performance Large Volumes Application: Manufacturing

Quality Standards

DRAVYOM's Gallium Arsenide Etchants are manufactured under stringent quality control protocols, meeting international semiconductor industry standards including SEMI, JEIDA, and ISO specifications. Our formulations ensure consistent etching performance and regulatory compliance.

ISO 9001:2015 Certified Manufacturing
SEMI Standards Compliance
Electronic Grade Components
Advanced Etch Analysis
Ultra-Low Metal Contamination
Batch-to-Batch Consistency
Complete Certificate of Analysis
Safe Handling & Delivery

Advanced Chemical Properties & Performance

Electronic Grade Gallium Arsenide Etchants exhibit exceptional chemical properties essential for precision compound semiconductor processing applications. The ultra-pure composition and optimized chemistry ensure reliable performance in demanding electronic manufacturing processes.

Etching Properties
GaAs Etch Rate: 50-500 nm/min
Selectivity: GaAs:AlGaAs > 50:1
Uniformity: ±5% across wafer
Surface Finish: < 1 nm RMS
Process Conditions
Temperature Range: 20-40°C
pH Range: 0.5-2.0 (acidic)
Bath Life: 4-8 hours active
Agitation: Gentle required
Chemical Composition
Primary Components: H₂SO₄:H₂O₂:H₂O
Typical Ratio: 3:1:1 (standard)
Oxidizer Content: H₂O₂ 30% grade
Acid Concentration: Concentrated H₂SO₄
Purity Specifications
Metal Impurities: ≤ 10 ppb total
Particle Count: ≤ 50 (>0.5µm)/mL
Organic Impurities: ≤ 5 ppb TOC
Halide Content: ≤ 1 ppm
Stability Properties
Shelf Life: 3 months (mixed)
Storage Temperature: 15-25°C
Light Sensitivity: Store in dark
Activity Loss: < 5% per week

Performance Characteristics

Detailed performance metrics demonstrate Electronic Grade Gallium Arsenide Etchant superiority in compound semiconductor applications with exceptional etch control, selectivity, and surface quality.

High Selectivity

GaAs:AlGaAs > 50:1

Precise material removal
Controlled Rate

50-500 nm/min (tunable)

Process flexibility
Surface Quality

< 1 nm RMS roughness

Smooth etch finish
Uniformity

±5% across wafer

Consistent processing
Process Window

20-40°C operation

Temperature stable
Rapid Etching

Fast process rates

High throughput

Safety Information

Extremely hazardous mixture containing concentrated sulfuric acid and hydrogen peroxide. Can cause severe burns and violent reactions. Generates heat and toxic vapors. Handle with extreme caution using appropriate protective equipment and fume hood ventilation.

Highly Toxic
Oxidizer
Corrosive

Storage & Handling

Store components separately in original containers in a cool, well-ventilated area away from organic materials. Mix fresh solutions as needed. Use only compatible materials and ensure emergency equipment availability including eyewash stations and spill control.

Cool storage (15-25°C)
Excellent ventilation
Separate component storage
Emergency equipment ready

Chemical Mechanisms & Reaction Pathways

Gallium arsenide etchants utilize controlled oxidation and dissolution chemistry through sulfuric acid-hydrogen peroxide mechanisms to provide selective GaAs etching with predictable etch rates and exceptional surface quality for semiconductor device fabrication.

Oxidation Mechanism

H₂O₂ + H₂SO₄ → controlled GaAs surface oxidation

Precise oxidation for uniform etching
Dissolution Chemistry

Selective gallium and arsenic oxide dissolution

Controlled etch rate and selectivity
Surface Reactions

Controlled interfacial chemistry for smooth etching

Optimized for device quality surfaces
Mass Transport

Diffusion-controlled reactant delivery and product removal

Uniform etching across wafer surfaces

Regulatory Compliance & Documentation

Comprehensive regulatory compliance ensures global semiconductor facility access with complete documentation packages supporting international electronics manufacturing standards and compound semiconductor process qualifications.

SEMI Standards

Semiconductor Equipment and Materials International compliance

Compound Semiconductor Specifications

III-V semiconductor processing and etching standards

Hazardous Chemical Standards

Concentrated acid handling and safety protocol specifications

Transport Regulations

Hazardous material transport and shipping compliance

Process Validation

Supported GaAs etching process qualification documentation

SDS Documentation

Multi-language Safety Data Sheets (16 sections, GHS compliant)

Technical Support & Value-Added Services

DRAVYOM's compound semiconductor team provides comprehensive GaAs etching support, process optimization assistance, and analytical services to maximize etchant performance in your specific device fabrication applications.

Process Development
  • GaAs etching process optimization support
  • Etch rate control and uniformity guidance
  • Selectivity optimization and validation
  • Custom etchant formulation development
Analytical Services
  • Etch rate analysis and monitoring
  • Surface morphology assessment
  • Contamination analysis and testing
  • Device fabrication process support
Technical Support
  • GaAs processing troubleshooting consultation
  • Equipment compatibility guidance
  • Safety training and emergency protocols
  • Compound semiconductor best practices
Supply Solutions
  • Safe etchant delivery and handling systems
  • Emergency chemical supply arrangements
  • Custom concentration preparation
  • Global compound semiconductor network

Environmental Impact & Sustainability

Our GaAs etchant production emphasizes environmental responsibility through sustainable manufacturing practices, acid recovery, and comprehensive environmental impact management for compound semiconductor operations.

Acid Recovery

Advanced acid recovery and recycling systems

Waste Neutralization

Comprehensive neutralization and treatment systems

Clean Production

Energy-efficient manufacturing with emission controls

Safe Disposal

Comprehensive guidance for etchant waste management

ISO 14001

Environmental management system certified production

Container Recycling

Acid-resistant container return and recycling programs

Manufacturing Excellence & Quality Control

DRAVYOM's state-of-the-art etchant manufacturing facility employs advanced mixing technology and continuous monitoring systems to ensure consistent GaAs etchant quality and performance across all production batches.

Production Process

Advanced mixing and blending in controlled acid-safe environment

Precise composition control for uniform etching
Quality Testing

20-point analytical testing protocol including concentration and impurities

Titration analysis and performance validation
Quality Systems

ISO 9001:2015 quality management with compound semiconductor accreditation

Continuous improvement and safety validation
Packaging Control

Acid-resistant containers with specialized safety packaging

Safe transport and contamination prevention

Market Applications & Performance Data

Comprehensive compound semiconductor data demonstrating GaAs etchant effectiveness across diverse device applications with quantified performance metrics and process validations.

GaAs Device Fabs
Etch Rate: 50-500 nm/min Selectivity: >100:1 GaAs/AlGaAs Uniformity: ±5% across wafer
RF Applications
Surface Quality: <1nm roughness Edge Definition: <50nm linewidth control Device Yield: >95% for HEMTs
Optoelectronics
Mesa Definition: ±2% height control Throughput: 40% faster processing Yield: 98%+ device success

DRAVYOM Competitive Advantages

Superior Performance

Consistently exceeds GaAs specifications with optimized formulations and exceptional etching performance

Reliable Supply

Guaranteed availability with specialized logistics and compound semiconductor chemical scheduling

GaAs Expertise

Dedicated compound semiconductor team provides process development and troubleshooting support

Quality Assurance

Traceable certificates with comprehensive analytical data and device validation support

Global Standards

International compliance with SEMI and compound semiconductor specifications for worldwide acceptance

Partnership Approach

Collaborative relationships with device manufacturers and custom etchant development services

Electronics Excellence Demands Ultra-Pure Chemicals

Get electronic grade Gallium Arsenide Etchants for semiconductor processing, explore custom formulations, or discuss process optimization with our electronics specialists.

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